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	<title>Memristor &#187; Electronics</title>
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	<description>Science Advocacy through Emerging Technology Prototyping</description>
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		<title>Elpida enters reRam production fray: 30nm DRAM competitor by 2013</title>
		<link>http://www.memristor.org/prototypes/736/elpida-reram-dram-30nm-sharp-micron-nanya-non-volatile-flash-memory</link>
		<comments>http://www.memristor.org/prototypes/736/elpida-reram-dram-30nm-sharp-micron-nanya-non-volatile-flash-memory#comments</comments>
		<pubDate>Mon, 30 Jan 2012 12:47:36 +0000</pubDate>
		<dc:creator>memoryman</dc:creator>
				<category><![CDATA[Memory]]></category>
		<category><![CDATA[News]]></category>
		<category><![CDATA[Prototypes]]></category>
		<category><![CDATA[Elpida Memory]]></category>
		<category><![CDATA[Flash Storage]]></category>
		<category><![CDATA[hp labs]]></category>
		<category><![CDATA[micron]]></category>
		<category><![CDATA[Nanya Technology]]></category>
		<category><![CDATA[nonvolatile memory]]></category>
		<category><![CDATA[ReRAM]]></category>
		<category><![CDATA[sharp]]></category>

		<guid isPermaLink="false">http://www.memristor.org/?p=736</guid>
		<description><![CDATA[Elpida Memory Inc. has produced a ReRam [nonvolatile resistance memory, a DRAM/flash memory competitor] prototype on 50nm at a 64-Mbits capacity, with 10ns write cycles, and 1 million read-write endurance cycles. The substrate material is undisclosed: The prototype was jointly developed with the New Energy and Industrial Technology Development Organization (NEDO), a Japanese-funded public institution. [...]]]></description>
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		<title>Intel hits 20nm Flash Storage SSD Milestone</title>
		<link>http://www.memristor.org/electronics/flash-storage/661/20nm-nand-flash-storage-ssd-intel-mi-cron</link>
		<comments>http://www.memristor.org/electronics/flash-storage/661/20nm-nand-flash-storage-ssd-intel-mi-cron#comments</comments>
		<pubDate>Thu, 14 Apr 2011 22:11:46 +0000</pubDate>
		<dc:creator>memoryman</dc:creator>
				<category><![CDATA[Flash Storage]]></category>
		<category><![CDATA[IMFT]]></category>
		<category><![CDATA[memory]]></category>
		<category><![CDATA[nand]]></category>
		<category><![CDATA[ssd]]></category>

		<guid isPermaLink="false">http://www.memristor.org/?p=661</guid>
		<description><![CDATA[Intel and Micron announced today they have hit the 20nm Flash MLC NAND target. Last months Toshiba milestone of 24nm NAND flash now has competition. Its being reported that Intel and Micron are sending out samples of 20nm NAND flash, at 2 bits per cell, in 8GB die area sizes of 118mm to selected customers: [...]]]></description>
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		<title>Ultrafast Exchange Interaction hinted at in Ferromagnetic and Antiferromagnetic Spin Reversal</title>
		<link>http://www.memristor.org/news/619/exchange-interaction-anti-ferromagnetic-spin-reversal-memory</link>
		<comments>http://www.memristor.org/news/619/exchange-interaction-anti-ferromagnetic-spin-reversal-memory#comments</comments>
		<pubDate>Wed, 13 Apr 2011 16:29:07 +0000</pubDate>
		<dc:creator>memoryman</dc:creator>
				<category><![CDATA[Memory]]></category>
		<category><![CDATA[News]]></category>
		<category><![CDATA[magnetic]]></category>
		<category><![CDATA[magnetic spin]]></category>
		<category><![CDATA[spin reversal]]></category>
		<category><![CDATA[spintronic]]></category>

		<guid isPermaLink="false">http://www.memristor.org/?p=619</guid>
		<description><![CDATA[A paper titled &#8220;Transient ferromagnetic-like state mediating ultrafast reversal of antiferromagnetically coupled spins&#8221;, submitted last September, has finally made it into Nature Letters, and shows some promise for increasing the reach of spin computing speed, particular to the exchange interaction between Gadolinium, Cobalt, and Iron: &#8230;We use the element-specific technique X-ray magnetic circular dichroism to [...]]]></description>
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		<title>Toshiba announces date for promised 24nm NAND flash</title>
		<link>http://www.memristor.org/electronics/flash-storage/602/toshiba-24nm-nand-flash-smartnand-64gb-production-available</link>
		<comments>http://www.memristor.org/electronics/flash-storage/602/toshiba-24nm-nand-flash-smartnand-64gb-production-available#comments</comments>
		<pubDate>Wed, 06 Apr 2011 21:52:21 +0000</pubDate>
		<dc:creator>memoryman</dc:creator>
				<category><![CDATA[Flash Storage]]></category>
		<category><![CDATA[Memory]]></category>
		<category><![CDATA[nand]]></category>

		<guid isPermaLink="false">http://www.memristor.org/?p=602</guid>
		<description><![CDATA[Toshiba (TAEC) announced the release dates today for their 24nm smartNAND NAND flash memory chips. These are the 48 pin TSOP (12mm x 20mm x 1.2mm), 52 land LGA (14mm x 18mm x 1.0mm) there had been talk about since last year: standard NAND flash memory interface, 8K Byte page size, 4 read and 2 [...]]]></description>
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		<title>Nanoscale Thermoelectric Peltier cooling in Graphene</title>
		<link>http://www.memristor.org/electronics/599/nanoscale-thermoelectric-peltier-cooling-graphene-transistors</link>
		<comments>http://www.memristor.org/electronics/599/nanoscale-thermoelectric-peltier-cooling-graphene-transistors#comments</comments>
		<pubDate>Mon, 04 Apr 2011 04:10:19 +0000</pubDate>
		<dc:creator>memoryman</dc:creator>
				<category><![CDATA[Electronics]]></category>
		<category><![CDATA[flexible memory]]></category>
		<category><![CDATA[graphene]]></category>
		<category><![CDATA[graphene oxide]]></category>
		<category><![CDATA[low power]]></category>
		<category><![CDATA[nanoprocessor]]></category>
		<category><![CDATA[spintronic]]></category>
		<category><![CDATA[transistors]]></category>

		<guid isPermaLink="false">http://www.memristor.org/?p=599</guid>
		<description><![CDATA[Thermoelectric peltier cooling effects at graphene and metal junctions have been demonstrated by a group out of the University of Illinois. Kyle Grosse, Feifei Lian, Myung-Ho Bae,William King, and Eric Pop used &#8220;&#8230; atomic force microscopy to measure the temperature distributions at the contacts of working graphene transistors&#8221;: Our data indicate that thermoelectric effects account [...]]]></description>
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		<item>
		<title>Memristor Crossbar Based Fuzzy Membership Functions</title>
		<link>http://www.memristor.org/electronics/522/memristor-crossbar-based-fuzzy-membership-functions</link>
		<comments>http://www.memristor.org/electronics/522/memristor-crossbar-based-fuzzy-membership-functions#comments</comments>
		<pubDate>Thu, 16 Sep 2010 01:03:07 +0000</pubDate>
		<dc:creator>memoryman</dc:creator>
				<category><![CDATA[Electronics]]></category>
		<category><![CDATA[fuzzy logic]]></category>

		<guid isPermaLink="false">http://www.memristor.org/?p=522</guid>
		<description><![CDATA[Not to be confused with the other research into probabilistic computing, a new paper out on arxiv proposes an interesting method for implementing fuzzy membership functions via crossbar thresholding: This process can simply be implemented by the memristor crossbar-based circuit shown [.fig.] Memristance of the memristors at those crosspoints which are specified by black dots [...]]]></description>
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