<?xml version="1.0" encoding="UTF-8"?>
<rss version="2.0"
	xmlns:content="http://purl.org/rss/1.0/modules/content/"
	xmlns:wfw="http://wellformedweb.org/CommentAPI/"
	xmlns:dc="http://purl.org/dc/elements/1.1/"
	xmlns:atom="http://www.w3.org/2005/Atom"
	xmlns:sy="http://purl.org/rss/1.0/modules/syndication/"
	xmlns:slash="http://purl.org/rss/1.0/modules/slash/"
	>

<channel>
	<title>Memristor &#187; RRAM</title>
	<atom:link href="http://www.memristor.org/memristance/rram/feed" rel="self" type="application/rss+xml" />
	<link>http://www.memristor.org</link>
	<description>Science Advocacy through Emerging Technology Prototyping</description>
	<lastBuildDate>Fri, 03 Feb 2012 19:56:17 +0000</lastBuildDate>
	<language>en</language>
	<sy:updatePeriod>hourly</sy:updatePeriod>
	<sy:updateFrequency>1</sy:updateFrequency>
	<generator>http://wordpress.org/?v=3.3</generator>
		<item>
		<title>1 Transistor &#8211; 1 Memristor Cell RRAM on flexible substrates advances</title>
		<link>http://www.memristor.org/circuit/718/transistor-flexible-rram-nonvolatile-memory-wearables-epaper-displays</link>
		<comments>http://www.memristor.org/circuit/718/transistor-flexible-rram-nonvolatile-memory-wearables-epaper-displays#comments</comments>
		<pubDate>Fri, 04 Nov 2011 12:01:58 +0000</pubDate>
		<dc:creator>memoryman</dc:creator>
				<category><![CDATA[Circuits]]></category>
		<category><![CDATA[1T-1M]]></category>
		<category><![CDATA[epaper]]></category>
		<category><![CDATA[flexible memory]]></category>
		<category><![CDATA[low power]]></category>
		<category><![CDATA[nonvolatile memory]]></category>
		<category><![CDATA[nor]]></category>
		<category><![CDATA[RRAM]]></category>
		<category><![CDATA[substrates]]></category>
		<category><![CDATA[titanium]]></category>
		<category><![CDATA[transistors]]></category>
		<category><![CDATA[wearables]]></category>

		<guid isPermaLink="false">http://www.memristor.org/?p=718</guid>
		<description><![CDATA[Researchers out of Korea recently published a paper on their success in implementing a single titanium oxide based memristor integrated with a single crystal silicon transistor. In addition to future research into improvements for the &#8220;read&#8221; problem of nonvolatile memory via a diode and unipolar resistor combination, they created and tested a 1 Transistor, 1 [...]]]></description>
		<wfw:commentRss>http://www.memristor.org/circuit/718/transistor-flexible-rram-nonvolatile-memory-wearables-epaper-displays/feed</wfw:commentRss>
		<slash:comments>0</slash:comments>
		</item>
		<item>
		<title>Flexible Memristive Memory Array on Plastic Substrates</title>
		<link>http://www.memristor.org/journal-papers/715/flexible-memristive-memory-array-substrate-rram</link>
		<comments>http://www.memristor.org/journal-papers/715/flexible-memristive-memory-array-substrate-rram#comments</comments>
		<pubDate>Fri, 04 Nov 2011 10:45:41 +0000</pubDate>
		<dc:creator>memoryman</dc:creator>
				<category><![CDATA[Papers]]></category>
		<category><![CDATA[1T-1M]]></category>
		<category><![CDATA[flexible memory]]></category>
		<category><![CDATA[nonvolatile memory]]></category>
		<category><![CDATA[RRAM]]></category>
		<category><![CDATA[wearables]]></category>

		<guid isPermaLink="false">http://www.memristor.org/?p=715</guid>
		<description><![CDATA[in Papers of Interest: Format: Journal Abstract [account req] Title: &#8220;Flexible Memristive Memory Array on Plastic Substrates&#8221; Authors: Seungjun Kim, Sung Kyu Kim, and Hu Young Jeong [Korea Advanced Institute of Science and Technology], Sung-Yool Choi [Electronics and Telecommunications Research Institute (ETRI), Korea], Keon Jae Lee [Ulsan National Institute of Science and Technology (UNIST), Korea] [...]]]></description>
		<wfw:commentRss>http://www.memristor.org/journal-papers/715/flexible-memristive-memory-array-substrate-rram/feed</wfw:commentRss>
		<slash:comments>0</slash:comments>
		</item>
		<item>
		<title>Scientific American on Flash Memory outlook</title>
		<link>http://www.memristor.org/news/519/scientific-american-on-flash-memory-outlook</link>
		<comments>http://www.memristor.org/news/519/scientific-american-on-flash-memory-outlook#comments</comments>
		<pubDate>Tue, 14 Sep 2010 20:40:13 +0000</pubDate>
		<dc:creator>memoryman</dc:creator>
				<category><![CDATA[News]]></category>
		<category><![CDATA[dram]]></category>
		<category><![CDATA[Flash Storage]]></category>
		<category><![CDATA[mram]]></category>
		<category><![CDATA[nantero]]></category>
		<category><![CDATA[NRAM]]></category>
		<category><![CDATA[pram]]></category>
		<category><![CDATA[RRAM]]></category>
		<category><![CDATA[sram]]></category>

		<guid isPermaLink="false">http://www.memristor.org/?p=519</guid>
		<description><![CDATA[An great in-depth and comprehensive article from Scientific American today looks at the current and future forecasts of the memory field, across the following competing technologies: DRAM [Dynamic Random Access Memory] SRAM [Static Random Access Memory] RRAM [Resistive random access memory] PRAM [Phase change random access memory] MRAM [Magnetoresistive random access memory] NRAM [Nano random [...]]]></description>
		<wfw:commentRss>http://www.memristor.org/news/519/scientific-american-on-flash-memory-outlook/feed</wfw:commentRss>
		<slash:comments>0</slash:comments>
		</item>
		<item>
		<title>Memristors as Resistive Random Access Memory (RRAM) News</title>
		<link>http://www.memristor.org/news/129/memristors-resistive-random-access-memory-rram-vanadium-dioxides</link>
		<comments>http://www.memristor.org/news/129/memristors-resistive-random-access-memory-rram-vanadium-dioxides#comments</comments>
		<pubDate>Sun, 11 Jan 2009 15:19:40 +0000</pubDate>
		<dc:creator>memoryman</dc:creator>
				<category><![CDATA[Flash Storage]]></category>
		<category><![CDATA[News]]></category>
		<category><![CDATA[RRAM]]></category>
		<category><![CDATA[vanadium dioxide]]></category>

		<guid isPermaLink="false">http://www.memristor.org/?p=129</guid>
		<description><![CDATA[arXiv.org is reporting in their Condensed Matter > Strongly Correlated Electrons taxonomy a new paper out of UCSD demonstrating phase-transition driven memristive systems using thin-film vanadium dioxides: Here, we demonstrate memristive response in a thin film of Vanadium Dioxide. This behavior is driven by the insulator-to-metal phase transition typical of this oxide. We discuss several [...]]]></description>
		<wfw:commentRss>http://www.memristor.org/news/129/memristors-resistive-random-access-memory-rram-vanadium-dioxides/feed</wfw:commentRss>
		<slash:comments>0</slash:comments>
		</item>
	</channel>
</rss>

