Noise and Variation Tolerant Multilevel Memristor Memory (MLMM) Systems, MRAM macros for Memory-in-Logic

Memristor related papers and abstracts from the 20th Great Lakes symposium on VLSI (May 16 – 18, 2010): Design considerations for variation tolerant multilevel CMOS/Nano memristor memory (Harika Manem, Garrett S. Rose, Xiaoli He, Wei Wang) examines, in part, unfolded crossbar memory noise margins and power consumption: “This work analyzes the design constraints for nanoscale […]