silicon oxide
A paper detailing new findings in silicon based memristors is out titled “Resistive switching in silicon suboxide films” [abstract]. While other teams in the past, such as a partnership between Rice university and Privatran, Inc. have been working on silicon based substrates for awhile, the current research utilized a novel method for both deposition and […]
in Papers of Interest (silicon oxide memristors): Format: Journal Abstract Title: “Resistive switching in silicon suboxide films” Authors: Adnan Mehonic, Maciej Wojdak, Stephen Hudziak, and Anthony J. Kenyon (all of Department of Electronic & Electrical Engineering, London, UK) , Sébastien Cueff, Christophe Labbé, and Richard Rizk (all of CIMAP, France), Blas Garrido and Olivier Jambois […]
The war of research continues its long slow climb to the future: researchers at Rice University who previously detailed their partnership with PrivaTran Inc. for fabrication of their silicon-based ReRam proof of concept memristors are putting the pressure on HP as different material studies begin to implement memristive behavior: “Our memristors are made out of […]
The NY Times has a good summary article on the emerging memory industry, with Rice University and PrivaTran, one of the early producers of the Rice 5nm silicon oxide switches, being put head to head with HP’s memristors and Intel, I.B.M., Numonyx and Samsungs phase change memory push: H.P. has for several years been making […]