Silicon based Memristors: New Findings

A paper detailing new findings in silicon based memristors is out titled “Resistive switching in silicon suboxide films” [abstract]. While other teams in the past, such as a partnership between Rice university and Privatran, Inc. have been working on silicon based substrates for awhile, the current research utilized a novel method for both deposition and display of the pinched hysteresis loop characteristics for memristive systems. The team has achieved on-off resistance ratios of 104:1 and higher.

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