Hodgkin-Huxley axon is made of memristors

in Papers of Interest:

Format: Journal Abstract
Title: “Hodgkin-Huxley axon is made of memristors” [Background – Overview]
Authors: Leon Chua, Department of Electrical Engineering and Computer Sciences, University of California Berkeley, USA ; Valery Sbitnev, Department of Electrical Engineering and Computer Sciences, University of California Berkeley, USA ; Hyongsuk Kim, Division of Electronics Engineering, Chonbuk National University, South Korea
Source: International Journal of Bifurcation and Chaos (IJBC) Volume: 22, Issue: 3(2012)
Publication Date: 29 March 2012
(c) Attribution: © 2012 World Scientific Publishing Co.

Synopsis: “… a rigorous and comprehensive nonlinear circuit-theoretic foundation for the memristive Hodgkin–Huxley Axon Circuit model. We show that the Hodgkin–Huxley Axon comprises a potassium ion-channel memristor and a sodium ion-channel memristor, along with some mundane circuit elements. From this new perspective […] anomalous phenomena and paradoxes reported in the literature are explained and clarified. The yet unknown nonlinear dynamical mechanisms which give birth to the action potentials remain hidden within the memristors […]. // […] Hodgkin–Huxley Equations, memristances, memductance, pinched hysteresis loops, time-varying resistance and time-varying conductance.”

Full Abstract at http://dx.doi.org/10.1142/S021812741230011X.