magnetic spin

Spin Hall Effect Induced by Resonant Scattering on Impurities in Metals

in Papers of Interest: Format: Journal Abstract Title: “Spin Hall Effect Induced by Resonant Scattering on Impurities in Metals” Authors: Albert Fert, Unité Mixte de Physique CNRS/Thales, Peter M. Levy, Department of Physics, New York University Source: American Physical Society, Physical Review Letters Publication Date: 15 April 2011 (c) Attribution: © 2011 American Physical Society […]

Magnetism on the Rise: MRAM, Graphene, and Solar

With the recent influx of graphene research breakthroughs in attaching magnetic effects to graphene sheets, and MRAM associated material science advances showing more promise for nvram type magnetic and spin based memory, companies in the MRAM space like: Everspin Technologies (a spinoff from Freescale in 2008, pushing ST-MRAM and who hit 16mb stacks last year […]

European Science Foundation: Graphene Week 2011

This years European Science Foundation Graphene Week 2011: Fundamental Science of Graphene and Applications of Graphene-Based Devices, being held this April 24 thru April 29, 2011 near Innsbruck, Austria, will include Andre Geim as Chair! ( A recent paper in Science on results of a team led by Geim has shown evidence of electron flow […]

Ultrafast Exchange Interaction hinted at in Ferromagnetic and Antiferromagnetic Spin Reversal

A paper titled “Transient ferromagnetic-like state mediating ultrafast reversal of antiferromagnetically coupled spins”, submitted last September, has finally made it into Nature Letters, and shows some promise for increasing the reach of spin computing speed, particular to the exchange interaction between Gadolinium, Cobalt, and Iron: …We use the element-specific technique X-ray magnetic circular dichroism to […]

Flexible Flash Memory on the horizon

The US National Institute of Standards and Technology has developed a form of memristor built on a flexible substrate, its being widely reported. The paper, titled A Flexible Solution-Processed Memristor, details the researchers at NIST were able create a 14 day window for the non-volatile memristive state: The Nist research team created the memristor using […]