ReRAM


Panasonic Japan prepares to release ReRam Nonvolatile Memory with Microprocessor Evaluation Kit

Panasonic Japan has a press release out detailing the availability of a microprocessor kit for evaluation that integrates a reram nonvolatile memory chip with a microcomputer. Are transputers back? Panasonic hopes to make the starter kits available for evaluation by May. They will “[…] make a direct connection to the USB port of your PC, […]

IEEE Symposia on VLSI Technology and Circuits 2012

The IEEE Symposia on VLSI Technology and Circuits, from June 12 to 15 in Honolulu, Hawaii will have several in depth tracks focusing on ReRam and memristor based research. The two tracks have the following tentative schedules: please bookmark and check the VLSI Conference Website (below) for the latest updates and information. A sampling of the […]

Elpida enters reRam production fray: 30nm DRAM competitor by 2013

Elpida Memory Inc. has produced a ReRam [nonvolatile resistance memory, a DRAM/flash memory competitor] prototype on 50nm at a 64-Mbits capacity, with 10ns write cycles, and 1 million read-write endurance cycles. The substrate material is undisclosed: The prototype was jointly developed with the New Energy and Industrial Technology Development Organization (NEDO), a Japanese-funded public institution. […]

HP Labs and Hynix Semiconductor move towards Memristor Production Schedule

The HP Labs and Hynix partnership is currently producing “hundreds of wafers through a Hynix full-size fab.”, Stan Williams was quoted at the International Electronics Forum 2011 yesterday. No word on how many of HP’s memristive, phase change PCM, and resistive RAM patents are still in process, especially with other competitors such as Samsung and […]

HP digs deeper into the electrochemical and thermal operations of titanium oxide memristors

A couple new papers published from HP Labs and associated university partnerships titled “Switching location of a Bipolar Memristor, Chemical, Thermal and Structural Mapping” and “Molecular dynamics simulations of Oxide Memory Resistors” in next months IOP Science’s Nanotechnology journal detail how HP has continued to focus in on Titanium Oxide based strata. Of particular interest […]

Molecular dynamics simulations of Oxide Memory Resistors

in Papers of Interest: Format: Journal Abstract Title: “Molecular dynamics simulations of oxide memory resistors (memristors)” Authors: S.E. Savel’ev [Department of Physics, Loughborough University UK], A.S. Alexandrov [Department of Physics, Loughborough University UK and Hewlett-Packard Laboratories], A M Bratkovsky and R Stanley Williams [Hewlett-Packard Laboratories] Source: IOP Science, Nanotechnology, Volume 22 Number 25 Publication Date: […]