Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell

in Papers of Interest:

Format: Journal Abstract
Title: “Memristive tri-stable resistive switching in ruptured conducting filaments on a Pt/TiO2/Pt cell”
Authors: Kyung Jean Yoon, Min Hwan Lee (also of School of Engineering, University of California, Merced USA ), Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, Sora Han, Jung Ho Yoon, Kyung Min Kim and Cheol Seong Hwang all of WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul, Korea
Source: IOPScience, Nanotechnology Volume 23 Number 18
Publication Date: 20 April 2012
(c) Attribution: © 2012 IOPScience

Synopsis: “… A tri-stable memristive switching was demonstrated on a Pt/TiO2/Pt device and its underlying mechanism was suggested through a series of electrical measurements. Tri-stable switching could be initiated from a device in unipolar reset status. The unipolar reset status was obtained by performing an electroforming step on a pristine cell […] followed by unipolar reset switching. […] postulated that tri-stable switching occurred at the location where the conductive filament (initially formed by the electroforming step) was ruptured by a subsequent unipolar reset process. The mechanism of the tri-stable memristive switching presented […] was attributed to the migration of oxygen ions through the ruptured filament region and the resulting modulation of the Schottky-like interfaces. The assertion was further supported by a comparison study performed on a Pt/TiO2/TiO2−x/Pt cell.”

Full Abstract at http://dx.doi.org/10.1088/0957-4484/23/18/185202.