Flexible Memristive Memory Array on Plastic Substrates

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Format: Journal Abstract [account req]

Title: “Flexible Memristive Memory Array on Plastic Substrates”

Authors: Seungjun Kim, Sung Kyu Kim, and Hu Young Jeong [Korea Advanced Institute of Science and Technology], Sung-Yool Choi [Electronics and Telecommunications Research Institute (ETRI), Korea], Keon Jae Lee [Ulsan National Institute of Science and Technology (UNIST), Korea]

Source: Nano Letters

Publication Date: October 25 2011

Attribution: (c) American Chemical Society

Synopsis: “[…] Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. This paper describes the development of NOR type flexible resistive random access memory (RRAM) with a one transistor–one memristor structure (1T-1M). By integration of a high-performance single crystal silicon transistor with a titanium oxide based memristor, random access to memory cells on flexible substrates was achieved without any electrical interference from adjacent cells. […]”

Full Abstract at http://pubs.acs.org/doi/abs/10.1021/nl203206h [DOI 10.1021/nl203206h].

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