Elpida Memory Inc. has produced a ReRam [nonvolatile resistance memory, a DRAM/flash memory competitor] prototype on 50nm at a 64-Mbits capacity, with 10ns write cycles, and 1 million read-write endurance cycles. The substrate material is undisclosed: The prototype was jointly developed with the New Energy and Industrial Technology Development Organization (NEDO), a Japanese-funded public institution. […]
A paper titled “Transient ferromagnetic-like state mediating ultrafast reversal of antiferromagnetically coupled spins”, submitted last September, has finally made it into Nature Letters, and shows some promise for increasing the reach of spin computing speed, particular to the exchange interaction between Gadolinium, Cobalt, and Iron: …We use the element-specific technique X-ray magnetic circular dichroism to […]
Toshiba (TAEC) announced the release dates today for their 24nm smartNAND NAND flash memory chips. These are the 48 pin TSOP (12mm x 20mm x 1.2mm), 52 land LGA (14mm x 18mm x 1.0mm) there had been talk about since last year: standard NAND flash memory interface, 8K Byte page size, 4 read and 2 […]
Does hand woven memory sound too poetic to be true? On the occasion of MIT’s 1951 Project Whirlwind‘s electrostatic storage medium the Magnetic Core Memory (RAM), advances in phase change and nonvolatile memory tech made possible by Chua’s memristor mathematics really highlights the almost half century of distance from the earliest model of a memory […]
The Memristor has recently brought about a lookback at early Processor In Memory attempts, one of which was the Transputer. INMOS, a UK semiconductor company from the early 1980’s, (later the familiar ST Electronics, NYSE:STM) invested heavily in concurrent computing microprocessor design, which, while missing the target on a viable “Plastic Pal who’s Fun to […]
Fujitsu announced at the International Electron Devices Meeting that they have recently added titanium to their nickel oxide ReRam (resistive random access memory), and detailed the low power consumption improvements over standard transistance: Conventionally, ReRAM devices have been formed from nickel oxide (NiO) films. In Fujitsu Labs new ReRAM, a NiO film doped with titanium […]
Emerging technology provides a unique opportunity to introduce science within education. The development of Memristors, the fourth passive component type after resistors, capacitors and inductors, along with other Solid State memory devices, takes us one step further to creating cheap, powerful, distributed solutions for sensing and processing.
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