HP digs deeper into the electrochemical and thermal operations of titanium oxide memristors

memristor-symbol A couple new papers published from HP Labs and associated university partnerships titled “Switching location of a Bipolar Memristor, Chemical, Thermal and Structural Mapping” and “Molecular dynamics simulations of Oxide Memory Resistors” in next months IOP Science’s Nanotechnology journal detail how HP has continued to focus in on Titanium Oxide based strata. Of particular interest are specifics and correlations between simulations as to the function and location of switching locations on the surface.

But in the context of all the advances in different substrates, including graphene, it will be interesting to see how various substrate effects line up with device design expectations. Either way, some of the spice macromodeling still has a long slog to see some of the observations filter up to usability.

However, last months award of a $7 million us grant [link] from the Air Force Office of Scientific Research via their MURI program to the University of Santa Barbara, with collaboration from the California Institute of Technology, Stony Brook University NY, and University of Illinois at Urbana-Champaign will surely help. The UCSB Department of Electrical and Computer Engineering will be looking at building nanoscale compact three-dimensional memristor technology.

Of interest for those following the slow rise of qubits, a similar grant was dispatched to UCSB’s Center for Spintronics and Quantum Computation for “Quantum Memories in Photon-Atomic Solid State Systems.”

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