filamentary switching

Resistive switching in silicon suboxide films

in Papers of Interest (silicon oxide memristors): Format: Journal Abstract Title: “Resistive switching in silicon suboxide films” Authors: Adnan Mehonic, Maciej Wojdak, Stephen Hudziak, and Anthony J. Kenyon (all of Department of Electronic & Electrical Engineering, London, UK) , Sébastien Cueff, Christophe Labbé, and Richard Rizk (all of CIMAP, France), Blas Garrido and Olivier Jambois […]

Hafnium Oxide RRAM, and others, at the 2012 VLSI Symposia

Let the claims begin! Memory papers will be in abundance at this years IEEE Symposia on VLSI Technology and Circuits. IMEC (the Interuniversity Microelectronics Centre out of Leuven, Belgium) has started it off with a summary of what will be presenting on hafnium oxide and other alternatives for formulation of ReRAM. One paper of interest […]