in Papers of Interest: Format: Journal Abstract Title: “Memristor based reactanceless oscillators” Authors: M. Affan Zidan, H. Omran, K.N. Salama, A.G. Radwan (King Abdullah University of Science and Technology Electrical Engineering Program, Saudi Arabia) Source: IEE Electronics Letters, Volume 47, Issue 22 Publication Date: 27 October 2011 (c) Attribution: © 2011 The Institution of Engineering [...]
in Papers of Interest: Format: Journal Abstract [account req] Title: “Flexible Memristive Memory Array on Plastic Substrates” Authors: Seungjun Kim, Sung Kyu Kim, and Hu Young Jeong [Korea Advanced Institute of Science and Technology], Sung-Yool Choi [Electronics and Telecommunications Research Institute (ETRI), Korea], Keon Jae Lee [Ulsan National Institute of Science and Technology (UNIST), Korea] [...]
in Papers of Interest: Format: Journal Abstract Title: “Solving mazes with memristors: a massively-parallel approach” Authors: Yuriy V. Pershin (Department of Physics and Astronomy, USC Nanocenter, University of South Carolina) and Massimiliano Di Ventra (Department of Physics, University of California San Diego) Source: Physical Review E, Vol. 84, Issue 4 (2011) Publication Date: 14 October [...]
in Papers of Interest: Format: Journal Abstract Title: “Molecular dynamics simulations of oxide memory resistors (memristors)” Authors: S.E. Savel’ev [Department of Physics, Loughborough University UK], A.S. Alexandrov [Department of Physics, Loughborough University UK and Hewlett-Packard Laboratories], A M Bratkovsky and R Stanley Williams [Hewlett-Packard Laboratories] Source: IOP Science, Nanotechnology, Volume 22 Number 25 Publication Date: [...]
in Papers of Interest: Format: Journal Abstract, Full Paper [free account req] Title: “The switching location of a bipolar memristor: chemical, thermal and structural mapping” Authors: R Stanley Williams, John Paul Strachan, Julien Borghetti, J Joshua Yang, Gilberto Medeiros-Ribeiro [ Nanoelectronic Research Group, Hewlett-Packard Labs ], Dmitri B Strukov [ Department of Electrical and Computer [...]
in Papers of Interest: Format: Journal Abstract Title: “Spin Hall Effect Induced by Resonant Scattering on Impurities in Metals” Authors: Albert Fert, Unité Mixte de Physique CNRS/Thales, Peter M. Levy, Department of Physics, New York University Source: American Physical Society, Physical Review Letters Publication Date: 15 April 2011 (c) Attribution: © 2011 American Physical Society [...]
Emerging technology provides a unique opportunity to introduce science within education. The development of Memristors, the fourth passive component type after resistors, capacitors and inductors, along with other Solid State memory devices, takes us one step further to creating cheap, powerful, distributed solutions for sensing and processing.
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