in Papers of Interest: Format: Journal Abstract Title: “Solving mazes with memristors: a massively-parallel approach” Authors: Yuriy V. Pershin (Department of Physics and Astronomy, USC Nanocenter, University of South Carolina) and Massimiliano Di Ventra (Department of Physics, University of California San Diego) Source: Physical Review E, Vol. 84, Issue 4 (2011) Publication Date: 14 October […]
in Papers of Interest: Format: Journal Abstract Title: “Molecular dynamics simulations of oxide memory resistors (memristors)” Authors: S.E. Savel’ev [Department of Physics, Loughborough University UK], A.S. Alexandrov [Department of Physics, Loughborough University UK and Hewlett-Packard Laboratories], A M Bratkovsky and R Stanley Williams [Hewlett-Packard Laboratories] Source: IOP Science, Nanotechnology, Volume 22 Number 25 Publication Date: […]
in Papers of Interest: Format: Journal Abstract, Full Paper [free account req] Title: “The switching location of a bipolar memristor: chemical, thermal and structural mapping” Authors: R Stanley Williams, John Paul Strachan, Julien Borghetti, J Joshua Yang, Gilberto Medeiros-Ribeiro [ Nanoelectronic Research Group, Hewlett-Packard Labs ], Dmitri B Strukov [ Department of Electrical and Computer […]
in Papers of Interest: Format: Journal Abstract Title: “Spin Hall Effect Induced by Resonant Scattering on Impurities in Metals” Authors: Albert Fert, Unité Mixte de Physique CNRS/Thales, Peter M. Levy, Department of Physics, New York University Source: American Physical Society, Physical Review Letters Publication Date: 15 April 2011 (c) Attribution: © 2011 American Physical Society […]
in Papers of Interest: Title: “On spike-timing-dependent-plasticity, memristive devices, and building a self-learning visual cortex†Authors: Carlos Zamarreño-Ramos, Luis A. Camuñas-Mesa, Jose A. Pérez-Carrasco, Timothée Masquelier, Teresa Serrano-Gotarredona, Bernabé Linares-Barranco Source: Frontiers in Neuromorphic Engineering (online journal). Format: Full Paper Publication Date: 17 March 2011 Synopsis: “We will see how neurons and memristors can be […]
in Papers of Interest: Title: “Memristor Behaviors of Highly Oriented Anatase TiO2 Film Sandwiched between Top Pt and Bottom SrRuO3 Electrodes” Authors: In-Sung Yoon, Jin Sik Choi, Yeon Soo Kim, Sa Hwan Hong, In Rok Hwang, Sung-Oong Kang, Jin-Soo Kim, Bae Ho Park – Division of Quantum Phases and Devices, Department of Physics, Konkuk University, […]
Emerging technology provides a unique opportunity to introduce science within education. The development of Memristors, the fourth passive component type after resistors, capacitors and inductors, along with other Solid State memory devices, takes us one step further to creating cheap, powerful, distributed solutions for sensing and processing.
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