Fujitsu works on Nickel Oxide low power ReRAM

Fujitsu announced at the International Electron Devices Meeting that they have recently added titanium to their nickel oxide ReRam (resistive random access memory), and detailed the low power consumption improvements over standard transistance: Conventionally, ReRAM devices have been formed from nickel oxide (NiO) films. In Fujitsu Labs new ReRAM, a NiO film doped with titanium […]