A paper detailing new findings in silicon based ReRam memristors, particularly showing improved methods of substrate deposition, is out titled “Resistive switching in silicon suboxide films” [abstract]. A team at University College London has developed a silicon based Rram chip that demonstrates memristive behavior, and: [...] can be fabricated only from n- and p- type [...]
in Papers of Interest (silicon oxide memristors): Format: Journal Abstract Title: “Resistive switching in silicon suboxide films” Authors: Adnan Mehonic, Maciej Wojdak, Stephen Hudziak, and Anthony J. Kenyon (all of Department of Electronic & Electrical Engineering, University College London, London, UK) , Sébastien Cueff, Christophe Labbé, and Richard Rizk (all of CIMAP, France), Blas Garrido [...]
The war of research continues its long slow climb to the future: researchers at Rice University who previously detailed their partnership with PrivaTran Inc. for fabrication of their silicon-based ReRam proof of concept memristors are putting the pressure on HP as different material studies begin to implement memristive behavior: “Our memristors are made out of [...]
The NY Times has a good summary article on the emerging memory industry, with Rice University and PrivaTran, one of the early producers of the Rice 5nm silicon oxide switches, being put head to head with HP’s memristors and Intel, I.B.M., Numonyx and Samsungs phase change memory push: H.P. has for several years been making [...]
Emerging technology provides a unique opportunity to introduce science within education. The development of Memristors, the fourth passive component type after resistors, capacitors and inductors, along with other Solid State memory devices, takes us one step further to creating cheap, powerful, distributed solutions for sensing and processing.
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