Papers
in Papers of Interest: Format: Journal Abstract Title: “Molecular dynamics simulations of oxide memory resistors (memristors)” Authors: S.E. Savel’ev [Department of Physics, Loughborough University UK], A.S. Alexandrov [Department of Physics, Loughborough University UK and Hewlett-Packard Laboratories], A M Bratkovsky and R Stanley Williams [Hewlett-Packard Laboratories] Source: IOP Science, Nanotechnology, Volume 22 Number 25 Publication Date: [...]
in Papers of Interest: Format: Journal Abstract, Full Paper [free account req] Title: “The switching location of a bipolar memristor: chemical, thermal and structural mapping” Authors: R Stanley Williams, John Paul Strachan, Julien Borghetti, J Joshua Yang, Gilberto Medeiros-Ribeiro [ Nanoelectronic Research Group, Hewlett-Packard Labs ], Dmitri B Strukov [ Department of Electrical and Computer [...]
in Papers of Interest: Format: Journal Abstract Title: “Spin Hall Effect Induced by Resonant Scattering on Impurities in Metals” Authors: Albert Fert, Unité Mixte de Physique CNRS/Thales, Peter M. Levy, Department of Physics, New York University Source: American Physical Society, Physical Review Letters Publication Date: 15 April 2011 (c) Attribution: © 2011 American Physical Society [...]
in Papers of Interest: Title: “On spike-timing-dependent-plasticity, memristive devices, and building a self-learning visual cortex” Authors: Carlos Zamarreño-Ramos, Luis A. Camuñas-Mesa, Jose A. Pérez-Carrasco, Timothée Masquelier, Teresa Serrano-Gotarredona, Bernabé Linares-Barranco Source: Frontiers in Neuromorphic Engineering (online journal). Format: Full Paper Publication Date: 17 March 2011 Synopsis: “We will see how neurons and memristors can be [...]
in Papers of Interest: Title: “Memristor Behaviors of Highly Oriented Anatase TiO2 Film Sandwiched between Top Pt and Bottom SrRuO3 Electrodes” Authors: In-Sung Yoon, Jin Sik Choi, Yeon Soo Kim, Sa Hwan Hong, In Rok Hwang, Sung-Oong Kang, Jin-Soo Kim, Bae Ho Park – Division of Quantum Phases and Devices, Department of Physics, Konkuk University, [...]
A new paper from IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, VOL.X, NO.X, 201X titled “Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines” details the results of recent simulation matrices run on MCAM memristor models using a behavioral modeling approach; results on low power consumption in memory [...]
