ReRAM


Elpida enters reRam production fray: 30nm DRAM competitor by 2013

Elpida Memory Inc. has produced a ReRam [nonvolatile resistance memory, a DRAM/flash memory competitor] prototype on 50nm at a 64-Mbits capacity, with 10ns write cycles, and 1 million read-write endurance cycles. The substrate material is undisclosed: The prototype was jointly developed with the New Energy and Industrial Technology Development Organization (NEDO), a Japanese-funded public institution. [...]

HP Labs and Hynix Semiconductor move towards Memristor Production Schedule

The HP Labs and Hynix partnership is currently producing “hundreds of wafers through a Hynix full-size fab.”, Stan Williams was quoted at the International Electronics Forum 2011 yesterday. No word on how many of HP’s memristive, phase change PCM, and resistive RAM patents are still in process, especially with other competitors such as Samsung and [...]

HP digs deeper into the electrochemical and thermal operations of titanium oxide memristors

A couple new papers published from HP Labs and associated university partnerships titled “Switching location of a Bipolar Memristor, Chemical, Thermal and Structural Mapping” and “Molecular dynamics simulations of Oxide Memory Resistors” in next months IOP Science’s Nanotechnology journal detail how HP has continued to focus in on Titanium Oxide based strata. Of particular interest [...]

Molecular dynamics simulations of Oxide Memory Resistors

in Papers of Interest: Format: Journal Abstract Title: “Molecular dynamics simulations of oxide memory resistors (memristors)” Authors: S.E. Savel’ev [Department of Physics, Loughborough University UK], A.S. Alexandrov [Department of Physics, Loughborough University UK and Hewlett-Packard Laboratories], A M Bratkovsky and R Stanley Williams [Hewlett-Packard Laboratories] Source: IOP Science, Nanotechnology, Volume 22 Number 25 Publication Date: [...]

This Week, in Memory

As spice modeling for memristive circuits matures and begins to show the possible scope of theoretical applications, and Apple pushes towards SSD adoption, and Sandisk flash memory conquers investor outlooks, and memcapacitance mutators are successfully modeled, and flexible graphene oxides move towards experimental reram fabrication, and spin computing gets its own graphene boost, it may [...]

Pure Silicon Oxide ReRam Bit Cells takes on Titanium Performance?

The war of research continues its long slow climb to the future: researchers at Rice University who previously detailed their partnership with PrivaTran Inc. for fabrication of their silicon-based ReRam proof of concept memristors are putting the pressure on HP as different material studies begin to implement memristive behavior: “Our memristors are made out of [...]