Silicon based Memristors: New Findings
A paper detailing new findings in silicon based ReRam memristors, particularly showing improved methods of substrate deposition, is out titled “Resistive switching in silicon suboxide films” [abstract].
A team at University College London has developed a silicon based Rram chip that demonstrates memristive behavior, and:
[...] can be fabricated only from n- and p- type silicon and silicon oxide, and operates in ambient conditions. Resistance contrast is up to 5 orders of magnitude, switching time 90ns or shorter, and switching energy is 1pJ/bit or lower. Scanning Tunneling Microscopy suggests that the individual switching elements may be as small as 10nm [...] the table below shows the specifications achieved to date, alongside those of conventional Flash memory, and target specifications for our next generation of devices:
UCL ReRAM performance (credit UCL/Adnan Mehonic)
While other teams in the past, such as a partnership between Rice university and Privatran, Inc. have been working on silicon based substrates for awhile, the current research utilized a novel method for both deposition and display of the pinched hysteresis loop characteristics for memristive systems. The team has achieved on-off resistance ratios of 104:1 and higher.
