Nature Nanotechnology: 4nm seven-atom transistor

transistor A new paper in Nature: Nanotechnology titled “Spectroscopy of few-electron single-crystal silicon quantum dots” shows the result of a 4nm fabrication utilizing phosphorous/silicon replacement in modeling a seven atom transistor:

“The quantum dot is defined by atomically abrupt changes in the density of phosphorus dopant atoms, and the resulting confinement produces novel effects associated with energy splitting between the conduction band valleys.” [nature nanotech abstract]

Good news for spintronics.

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