Ideal Memristance via Formal Modeling of Bernoulli Memristors
A paper submitted on arxiv (via the Department of Chemistry and Department of Bioengineering Imperial College in London) details the results of mathematically modeling an ideal framework class of memristors on Bernoullis differential equations:
Such differentials can always be linearized and thus make it easier to obtain analytic/closed form expressions of the form v(t) = f (i(t)) or i(t) = g(v(t)) which relate the current i(t) through the memristor with the voltage v(t) across it. We then proceed by defining a way of quantifying the hysteresis of the i – v characteristic curve as a means of measuring the non-linearity of the memristor. [cornell @ archiv]
The authors make a good case study for approaching memristance through more formal approaches, in order to better differentiate what the controls are in different fab-lab implementations, and as a result of the fact that “systems governed by Bernoulli dynamics can always be linearized”: read the full pdf here.